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Edge-Defined Film-Fed Growth (EFG) Sapphire crystal growth Furnace
編號:SN20151119113329652
類別:Edge Defined Film-Fed Growth (EDG) Sapphire Crystalline Furnace
  • 產品概述
  • 規格參數
  • 服務支持

    產品優勢:Product Advantage

    1、  生長速度快,周期短(2-3/爐),成本低,易于穩定量產。

    High growing speed, short growing cycle (2-3 days), low cost, suitable for steady volume production.

    2、  成熟的設備制造技術和長晶工藝,且長晶工藝靈活,可根據客戶需要調整。

    Mature technology of equipment manufacturing and crystal growing process, and our flexible crystal growing process can be adjusted according to the client’s requirements.

    3、  可多片同步生長,同質同量,產能大幅提高,晶體坯料易加工,加工成本低,且長晶能耗低,成本可大大降低。

    Grows multiple high quality sheets simultaneously, significantly increases volume of production, the power can be easily prepared with low cost, low power consumption on growing process, reduce the growing cost significantly.

    4、  設備及熱場穩定性好,重復性高,主要熱場部件可使用2年以上。

    High stability of equipment and hot zone, high repeatability, main hot zone parts have life cycle of more than two years.

    5、  采用觸摸屏,PAC全自動操作系統,人性化的人機對話系統,操作簡便。

    Touch screen, PAC automatic operation system, uniquely designed human-machine communication system, easy to use.

    6、  擁有研發基地,可驗證長晶,為客戶提供專業的技術培訓、設備操作和工藝指導。

    Own R&D center to test crystal growing, providing our clients with professional training on technique, operation and process.

    7、  規?;难邪l基地,可同時進行技術驗證與創新,確保產品與技術的成熟性和前沿性,持續將公司最新研發成果快速與客戶共享。

    Large scale R&D center enables continuous technical validation and innovation, ensure the product and technology is mature and stay cutting-edge, and to share the latest research and development with our clients.

    8、  配置真空安全保護裝置,安全性能更高。

    Equipped with vacuum safety protection device, increases safety level.

    9、  精密穩定的提拉系統,專利設計,控制精度高,傳動平穩,抗干擾能力強,更利于晶體生長。

     

    Precise and stable pulling system, patent design, high precision control, better anti-interference ability, to ensure better growing process.

    性能參數Specification:

    類型 Type

    導模法 EFG

    爐體

    Chamber

    800×1300mm

    冷態空爐極限真空度

    Ultimate vacuum under cold furnace condition

    ≤6.6×10-4Pa

    籽晶桿

    Seed Rod

    爐內行程

    Internal Stroke

    1000mm

    提拉速度連續可調范圍/精度

    Adjustable range/precision of pulling speed

    0.1-50mm/h±1%

    快提拉速度連續升降可調

    Adjustable lifting range of fast pulling speed

    100-150mm/min

    真空配置

    Vacuum system

    分子泵、機械泵、插板閥

    Molecular pump, mechanical pump, gate valve

    真空測量系統

    Vacuum measuring system

    測量范圍:大氣壓到1×10-5Pa

    Measuring range: Atmosphere1×10-5Pa

    自動控制系統

    Automatic control system

    PAC全自動運行程序

    PAC automatic operating program

    循環水用量

    Circulation water usage

    ≥8 m3/h

    額定總功率/頻率

    Rated power/frequency

    80kw/2500Hz

    設備占地面積(長×寬×高)

    Floor space (L×W×H)

    2200×1200×4000mm3 

     

    技術指標:Technical parameter:

    項目Subject

    指標Parameter

    最大使用功率

    Max working power

    30kw

    長晶周期

    Cycle of growth

    70H

    單爐能耗

    Power consumption

    1200kw.H

    晶片規格

    Substrate specification

    雙片,多片(16-24片),異形件(管、棒、拱形件等);也可根據客戶要求定制規格。

    投料量

    Charge amount

    5-6kg或可連續加料

    5-6kg & can be added continuously

    取材率

    Sample drawing rate

    ≥80%

    成本

    Cost

    ¥600/kg

     

     

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